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| SIGC81T120R2C IGBT Chip in NPT-technology FEATURES: * 1200V NPT technology 200m chip * low turn-off losses * positive temperature coefficient * easy paralleling * integrated gate resistor This chip is used for: * power module BSM 50GD120DN2 Applications: * drives C G E Chip Type SIGC81T120R2C VCE 1200V ICn 50A Die Size 9.08 X 8.98 mm2 Package sawn on foil Ordering Code Q67041A4701-A003 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9.08 X 8.98 8 x ( 2.6 x 1.78 ) 1.46 x 0.8 81.5 / 63.5 200 150 90 167 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag -system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500m 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm 2 mm grd Edited by INFINEON Technologies AI PS DD HV3, L 7161-M, Edition 2, 03.09.2003 SIGC81T120R2C MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V C 150 20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions min. VGE=0V , IC=3mA VGE=15V, IC =50A IC =2mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V 5 1200 2.0 4.5 2.5 5.5 3.0 6.5 6.1 300 A nA V Value typ. max. Unit ELECTRICAL CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ci s s Co s s Cr s s Conditions V C E= 2 5 V , V GE= 0 V , f =1MHz Value min. typ. 3300 500 220 max. Unit pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) Symbol t d(on) tr td(off) tf Conditions 1) Tj= 1 2 5 C V C C =600V, IC=50A, V G E =+15/ - 1 5 V , R G = 2 2 Value min. typ. 44 56 380 70 max. 100 100 500 100 Unit ns values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies AI PS DD HV3, L 7161-M, Edition 2, 03.09.2003 SIGC81T120R2C CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7161-M, Edition 2, 03.09.2003 SIGC81T120R2C FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet BSM 50GD120DN2 ECONOPACK 2K DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 7161-M, Edition 2, 03.09.2003 |
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